Reliability phenomena under AC stressCHENMING HU.Microelectronics and reliability. 1998, Vol 38, Num 1, pp 1-5, issn 0026-2714Article

IC reliability simulationCHENMING HU.IEEE journal of solid-state circuits. 1992, Vol 27, Num 3, pp 241-246, issn 0018-9200Article

Future CMOS scaling and reliabilityCHENMING HU.Proceedings of the IEEE. 1993, Vol 81, Num 5, pp 682-689, issn 0018-9219Article

Projecting gate oxide reliability and optimizing reliability screensMOAZZAMI, R; CHENMING HU.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 7, pp 1643-1650, issn 0018-9383, 8 p.Article

Residential time-of-use kilowatthour meterHRINYA, S. J; CHENMING HU.Electric power systems research. 1986, Vol 11, Num 1, pp 13-23, issn 0378-7796Article

Plasma etching antenna effect on oxide-silicon interface reliabilityHYUNGCHEOL SHIN; CHENMING HU.Solid-state electronics. 1993, Vol 36, Num 9, pp 1356-1358, issn 0038-1101Article

Monitoring plasma-process induced damage in thin oxideHYUNGCHEOL SHIN; CHENMING HU.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 2, pp 96-102, issn 0894-6507Article

Optimization of epitaxial layers for power bipolar-MOS transistorDI-SON KUO; CHENMING HU.IEEE electron device letters. 1986, Vol 7, Num 9, pp 511-512, issn 0741-3106Article

FIELD-DEPENDENT LIGHT SCATTERING IN NEMATIC LIQUID CRYSTALS.CHENMING HU.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 12; PP. 1737-1738; BIBL. 5 REF.Article

The prospect of process-induced charging damage in future thin gate oxidesPARK, D; CHENMING HU.Microelectronics and reliability. 1999, Vol 39, Num 5, pp 567-577, issn 0026-2714Article

Thin gate oxide damage due to plasma processingSHIN, H. C; CHENMING HU.Semiconductor science and technology. 1996, Vol 11, Num 4, pp 463-473, issn 0268-1242Article

Effects of temperature and defects on breakdown lifetime of thin SiO₂ at very low voltagesSCHUEGRAF, K. F; CHENMING HU.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1227-1232, issn 0018-9383Article

Hole injection SiO₂ breakdown model for very low voltage lifetime extrapolationSCHUEGRAF, K. F; CHENMING HU.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 761-767, issn 0018-9383Article

A p-v-n diode model for CMOS latchupZAPPE, H. P; CHENMING HU.Solid-state electronics. 1991, Vol 34, Num 11, pp 1275-1279, issn 0038-1101Article

Stress-induced oxide leakageROFAN, R; CHENMING HU.IEEE electron device letters. 1991, Vol 12, Num 11, pp 632-634, issn 0741-3106Article

Determination of carrier lifetime from rectifier ramp recovery waveformBEN TIEN; CHENMING HU.IEEE electron device letters. 1988, Vol 9, Num 10, pp 553-555, issn 0741-3106Article

DETERMINATION OF NONUNIFORM DIFFUSION LENGTH AND ELECTRIC FIELD IN SEMICONDUCTORSCHENMING HU.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 7; PP. 822-825; BIBL. 12 REF.Article

Denser and More Stable SRAM Using FinFETs With Multiple Fin HeightsSACHID, Angada B; CHENMING HU.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2037-2041, issn 0018-9383, 5 p.Article

A high-quality stacked thermal/LPCVD gate oxide technology for ULSIMOAZZAMI, R; CHENMING HU.IEEE electron device letters. 1993, Vol 14, Num 2, pp 72-73, issn 0741-3106Article

High-frequency time-dependent breakdown of SiO₂ROSENBAUM, E; CHENMING HU.IEEE electron device letters. 1991, Vol 12, Num 6, pp 267-269, issn 0741-3106, 3 p.Article

Hot-carrier degradation in bipolar transistors at 300 and 110 K―effect on BiCMOS inverter performanceBURNETT, J. D; CHENMING HU.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 4, pp 1171-1173, issn 0018-9383, 3 p.Article

Modeling hot-carrier effects in polysilicon emitter bipolar transistorsBURNETT, J. D; CHENMING HU.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2238-2244, issn 0018-9383Article

Optimization of epitaxial layers for power bipolar-MOS transistorDI-SON KUO; CHENMING HU.IEEE electron device letters. 1986, Vol 7, Num 9, pp 511-512, issn 0741-3106Article

LED CHARGE-CONTROL MODEL AND SPEED AT HIGH CURRENTSCHENMING HU.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 599-601; BIBL. 10 REF.Article

Effect of low and high temperature anneal on process-induced damage of gate oxideKING, J. C; CHENMING HU.IEEE electron device letters. 1994, Vol 15, Num 11, pp 475-476, issn 0741-3106Article